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  • ...ror that incorporates an emitter degeneration resistor for only the output transistor, enabling the current source to generate low currents using only moderate r
    291 bytes (40 words) - 15:09, 17 December 2010
  • * {{rpl|Metal Oxide Semiconductor Field Effect Transistor}} * {{rpl|Bipolar transistor}}
    416 bytes (46 words) - 10:31, 2 April 2024
  • #redirect [[Transistor]]
    24 bytes (2 words) - 20:57, 5 January 2024
  • #REDIRECT [[Metal-oxide-semiconductor field-effect transistor]]
    63 bytes (4 words) - 12:12, 16 January 2011
  • #REDIRECT [[Metal-oxide-semiconductor field-effect transistor]]
    63 bytes (4 words) - 06:52, 19 November 2011
  • #REDIRECT [[Metal-oxide-semiconductor field-effect transistor]]
    63 bytes (4 words) - 12:06, 16 January 2011
  • #REDIRECT [[Metal Oxide Semiconductor Field Effect Transistor/Definition]]
    74 bytes (8 words) - 13:35, 4 January 2011
  • ...oinclude>A circuit model used for analyzing the small-signal behavior of [[transistor]]s.
    115 bytes (15 words) - 08:14, 12 June 2011
  • [[File:1st-Transistor.jpg|thumb|right|300px|The first transistor ever made was created using a bent-up paperclip, among other pieces. It wa In [[electronics]], a '''transistor''' is a [[semiconductor]] device that allows a signal at its input terminal
    3 KB (447 words) - 13:31, 5 July 2022
  • A single bipolar transistor amplifier with grounded base, signal applied to the emitter and output take
    218 bytes (32 words) - 10:47, 2 July 2011
  • ...the behavior and effects of [[electron]]s (as in [[electron tube]]s and [[transistor]]s) and with electronic devices, systems, or equipment.
    230 bytes (32 words) - 12:08, 16 October 2010
  • {{Image|Bell Labs water tower NJ1.jpg|right|300px|The iconic 3-legged "transistor" water tower in front of the (former) Bell Labs facility in Holmdel, NJ, in ...covering the existence of [[cosmic microwave background]], inventing the [[transistor]], and creating [[Unix]] and [[C (programming language)]].
    980 bytes (144 words) - 08:10, 11 March 2024
  • {{r|metal-oxide-semiconductor field-effect transistor}} {{r|bipolar transistor}}
    961 bytes (147 words) - 11:23, 26 May 2011
  • {{r|Bipolar transistor}} {{r|Metal-oxide-semiconductor field-effect transistor}}
    953 bytes (146 words) - 12:53, 26 May 2011
  • {{r|Metal-oxide-semiconductor field-effect transistor}} {{r|Bipolar transistor}}
    1 KB (161 words) - 10:02, 22 June 2011
  • ...istor effect, however, was erratic, and was replaced by vacuum tubes until transistor theory developed and transistors were manufactured from other materials.
    2 KB (264 words) - 08:02, 18 October 2013
  • <noinclude>{{Subpages}}</noinclude>A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connecte
    417 bytes (62 words) - 22:20, 10 April 2011
  • | '''number of transistors''' || 3,500 transistor on die<ref name=thocp1974-75/><ref name=IntelMuseum/> | '''transistor size''' || 10 micron<ref name=IntelMuseum/>
    2 KB (328 words) - 07:30, 18 March 2024
  • A type of [[field effect|field-effect]] [[transistor]] with four electrical contacts and three layers: a metal top layer (connec
    418 bytes (61 words) - 22:21, 10 April 2011
  • | '''number of transistors''' || 2,300 transistor on die<ref name=thocp1974-75/><ref name=IntelMuseum/> | '''transistor size''' || 10 micron<ref name=IntelMuseum/>
    2 KB (284 words) - 12:03, 6 March 2024
  • ...se current ''i<sub>B</sub>''. Thus, Kirchhoff's current law applied to the transistor as a whole provides the output current drawn through resistor ''R<sub>C</su ...e bipolar transistor ''i<sub>B</sub>'' is normally negligible provided the transistor remains in [[Mode (electronics)|active mode]]. That is, based upon the idea
    7 KB (1,178 words) - 10:49, 10 June 2011
  • {{rpl|transistor}}
    514 bytes (62 words) - 21:36, 5 January 2024
  • ...istor]] (MOSFET), present by the millions in [[integrated circuit]]s. This transistor was invented by Dawon Khang and Martin Atalla in 1960, another [[Bell Labor ...cheaper, require less power, and obtain faster switching times. The first transistor was made from materials that included a paper clip and a razor blade.
    5 KB (763 words) - 09:15, 4 May 2024
  • ...toff mode''') and the '''on-mode''' (or '''saturation mode''' in [[bipolar transistor]]s, or '''ohmic mode''' for [[MOSFET]]'s), and visits the active mode only ...fers to its ''active mode'', while the ''saturation mode'' of the bipolar transistor invariably refers to its ''on'' mode. This confusion of terminology does no
    13 KB (2,277 words) - 12:22, 1 July 2011
  • ...appropriate selection of the DC current source it can be arranged that the transistor is configured to operate usefully, that is, it is in [[Mode (electronics)|' ...<sub>in</sub>'' is applied to the base. The emitter-to-base voltage of the transistor is hardly affected by the signal, and remains very nearly at the quiescent
    7 KB (1,223 words) - 11:22, 26 May 2011
  • {{r|Transistor}}
    896 bytes (141 words) - 13:49, 8 January 2011
  • {{r|Bipolar transistor}}
    915 bytes (145 words) - 12:54, 4 June 2014
  • {{r|Bipolar transistor}}
    933 bytes (147 words) - 11:30, 1 July 2011
  • ...e-to-air missile]], and also was the first company to produce commercial [[transistor]]s.
    1 KB (152 words) - 19:15, 14 July 2009
  • {{r|Bipolar transistor}}
    953 bytes (150 words) - 11:29, 1 July 2011
  • It was the first [[semiconductor]] used to make commercial [[transistor]]s.
    914 bytes (138 words) - 20:58, 25 April 2011
  • {{r|Bipolar transistor}}
    962 bytes (151 words) - 11:28, 1 July 2011
  • {{r|Bipolar transistor}}
    996 bytes (155 words) - 09:18, 13 June 2011
  • {{r|Transistor}}
    1,021 bytes (158 words) - 10:01, 22 June 2011
  • {{r|Metal Oxide Semiconductor Field Effect Transistor}}
    1 KB (158 words) - 23:09, 12 February 2011
  • {{r|Bipolar transistor}}
    1,013 bytes (158 words) - 09:12, 13 June 2011
  • {{r|Metal-oxide-semiconductor field-effect transistor}}
    1 KB (169 words) - 09:11, 13 June 2011
  • An '''Organic Field-Effect Transistor (OFET)''' is a class of [[thin film transistor]]s based on [[organic semiconductor]]s.
    3 KB (425 words) - 08:02, 12 November 2007
  • ...appropriate selection of the DC current source it can be arranged that the transistor is configured to operate usefully, that is, it is in [[Mode (electronics)|' ...or is very small compared to that in the emitter (lower by a factor of the transistor β). As the signal alters the emitter current, the collector current follow
    9 KB (1,673 words) - 11:24, 26 May 2011
  • ...that incorporates an emitter degeneration [[resistor]] for only the output transistor, enabling the current source to generate low currents using only moderate r The Widlar circuit may be used with [[bipolar transistor]]s, [[MOSFET|MOS transistors]], and even [[vacuum tube]]s. An example appli
    17 KB (2,850 words) - 20:14, 17 December 2010
  • ==Bipolar transistor== {{main|Bipolar transistor}}
    13 KB (2,071 words) - 10:15, 1 July 2011
  • ...ge|Bipolar current mirror with emitter resistors.PNG|left|200px| [[Bipolar transistor]] [[current mirror]]: ''I<sub>1</sub>'' is the ''reference current'' and ' ...or 1 / ''g<sub>m</sub>'' connected across ''r<sub>&pi;</sub>''. The second transistor ''Q<sub>2</sub>'' is represented by its [[hybrid-pi model]]. Table 1 below
    20 KB (3,085 words) - 10:38, 2 July 2011
  • ...an insulating layer, then by metal tracks, which link power supplies and [[Transistor|transistors]] to form the required circuit.These transistors, interconnecte
    2 KB (233 words) - 04:39, 8 June 2009
  • ...aw_diagram_(2004).jpg|thumb|350px|Growth of [[Electronic switch#Transistor|transistor counts]] for [[Intel]] processors (dots) and Moore's Law (upper line, 18 mo '''Moore's law''' is the prediction that the [[Electronic switch#Transistors|transistor]] density inside [[integrated circuit]]s will double every two years, and t
    7 KB (1,038 words) - 17:26, 18 September 2010
  • ...works in principle for a transconductance amplifier, while the second two-transistor example shows the approach to more complex cases using a current amplifier. ===Single-stage transistor amplifier===
    19 KB (3,224 words) - 09:47, 30 June 2011
  • ...lanar bipolar transistor.PNG|right|200px|A planar ''npn'' bipolar junction transistor as might be constructed in a [[integrated circuit]].}} ...s]], the '''bipolar transistor''', more completely the '''bipolar junction transistor''', is a three-terminal [[semiconductor|semiconductor device]] used for swi
    20 KB (3,320 words) - 07:39, 23 October 2021
  • ...properly. This minimum voltage is dictated by the need to keep the output transistor of the mirror in [[Mode (electronics)|active mode]]. The range of voltages ===Basic bipolar transistor mirror===
    25 KB (4,187 words) - 10:12, 22 June 2011
  • | '''number of transistors''' || 6,000 transistor on die
    2 KB (299 words) - 07:30, 18 March 2024
  • *'''1966''', launched the first mono transistor amplifier, the 50 and 50/E, for the professional market. ...'', launched 303 stereo amplifier for domestic use, accompanied by the all-transistor QUAD 33 control unit. Discontinued around 1985.
    5 KB (807 words) - 07:33, 20 April 2024
  • ...te between and change these states. Prior to commercial acceptance of the transistor, [[electromechanical relay]]s and [[vacuum tube]]s (thermionic valves) were ===Discrete transistor and IC CPUs===
    17 KB (2,465 words) - 20:44, 28 July 2010
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