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- A '''semiconductor''' is a substance with [[electrical conductivity]] intermediate between [[m ...sent in a semiconductor can be adjusted by introducing impurities into the semiconductor that alter the balance, allowing the hole and electron densities to differ.11 KB (1,755 words) - 13:05, 2 February 2011
- 153 bytes (18 words) - 10:45, 6 January 2011
- 322 bytes (45 words) - 12:13, 6 January 2011
- ...sion of dopant impurities and the terminology ''p-'' and ''n-''type. see [[Semiconductor#Dopant_impurities|dopant impurities]]. The figure shows two of the many possible structures used for ''pn-''semiconductor diodes, both adapted to increase the voltage the devices can withstand in r23 KB (3,734 words) - 07:29, 12 September 2013
- ...ection, made of two or more layers of material, of which at least one is a semiconductor.182 bytes (28 words) - 12:20, 10 January 2011
- {{r|Semiconductor diode}}374 bytes (47 words) - 01:18, 11 April 2011
- 28 bytes (3 words) - 13:35, 2 February 2011
- 28 bytes (3 words) - 10:17, 7 April 2011
- ...on=3rd |isbn=0471143235}} The definitive encyclopedic work on all types of semiconductor devices. *{{cite book |title=Semiconductor device physics and design |author=Umesh Kumar Mishra, Jasprit Singh |url=ht1 KB (199 words) - 11:28, 15 June 2011
- 27 bytes (3 words) - 14:10, 21 January 2011
- 27 bytes (3 words) - 09:42, 25 January 2011
- {{r|Semiconductor}}1,013 bytes (158 words) - 09:12, 13 June 2011
- #REDIRECT [[Metal-oxide-semiconductor field-effect transistor]]63 bytes (4 words) - 12:06, 16 January 2011
- ...r (called the ''body''). Its operation is based upon the modulation of the semiconductor conductivity by the electric field introduced in the body by the gate, the ...le that had to be overcome in realizing this device was the quality of the semiconductor-insulator interface, which in many materials systems contains a large numbe25 KB (4,018 words) - 04:18, 1 November 2013
- ..."off" the electrical connection between a source and drain contact at the semiconductor surface.417 bytes (62 words) - 22:20, 10 April 2011
- *{{cite book |title=Physics of semiconductor devices |author=SM Sze and Kwok K Ng |edition=3rd ed |pages=pp. 293 ''ff''953 bytes (144 words) - 12:16, 18 June 2011
- *{{cite book |title=Physics of semiconductor devices |author=SM Sze and Kwok K Ng |edition=3rd ed |pages=pp. 293 ''ff''437 bytes (70 words) - 13:44, 8 January 2011
- ...metal ''gate'' electrode separated by an insulating ''gate oxide'' from a semiconductor ''body''. A voltage on the gate modulates the conductivity of a surface ''c321 bytes (46 words) - 13:35, 4 January 2011
- {{r|Semiconductor}} {{r|Semiconductor diode}}1,021 bytes (158 words) - 10:01, 22 June 2011
- {{r|Semiconductor}}896 bytes (141 words) - 13:49, 8 January 2011
Page text matches
- ...Schottky diode and its historical development by a pioneer in the field of semiconductor electronics. ...on=3rd |isbn=0471143235}} The definitive encyclopedic work on all types of semiconductor devices.1 KB (143 words) - 12:23, 9 February 2011
- ...metal ''gate'' electrode separated by an insulating ''gate oxide'' from a semiconductor ''body''. A voltage on the gate modulates the conductivity of a surface ''c321 bytes (46 words) - 13:35, 4 January 2011
- #Redirect[[Semiconductor#Field_effect]]39 bytes (4 words) - 11:47, 8 January 2011
- #REDIRECT [[Semiconductor#Dopant_impurities]]45 bytes (4 words) - 10:43, 7 April 2011
- ...on=3rd |isbn=0471143235}} The definitive encyclopedic work on all types of semiconductor devices. *{{cite book |title=Semiconductor device physics and design |author=Umesh Kumar Mishra, Jasprit Singh |url=ht1 KB (199 words) - 11:28, 15 June 2011
- #REDIRECT [[Metal-oxide-semiconductor field-effect transistor]]63 bytes (4 words) - 06:52, 19 November 2011
- #REDIRECT [[Metal-oxide-semiconductor field-effect transistor]]63 bytes (4 words) - 12:06, 16 January 2011
- #REDIRECT [[Metal-oxide-semiconductor field-effect transistor]]63 bytes (4 words) - 12:12, 16 January 2011
- ..."off" the electrical connection between a source and drain contact at the semiconductor surface.417 bytes (62 words) - 22:20, 10 April 2011
- #REDIRECT [[Metal Oxide Semiconductor Field Effect Transistor/Definition]]74 bytes (8 words) - 13:35, 4 January 2011
- ...5vZ7ZoC&printsec=frontcover |author=SM Sze and Kwok K Ng |title=Physics of semiconductor devices |edition=3rd ed |isbn=0471143235 |year=2007 |publisher=J Wiley & So *A detailed discussion of bipolar structures is {{cite book |title=Bipolar semiconductor devices |author=David J Roulston |publisher=McGraw-Hill |url=http://books.g542 bytes (76 words) - 11:41, 12 June 2011
- <noinclude>{{Subpages}}</noinclude>A three-terminal semiconductor device used for switching and amplification.110 bytes (12 words) - 15:13, 10 June 2011
- ...he electrical connection between a ''source'' and ''drain'' contact at the semiconductor surface.418 bytes (61 words) - 22:21, 10 April 2011
- {{r|Semiconductor}} {{r|Metal-oxide-semiconductor field-effect transistor}}1 KB (169 words) - 09:11, 13 June 2011
- (InGaAs) Semiconductor substrate for [[infrared light]] detectors in the 700nm to 1.8µm near infr143 bytes (18 words) - 03:07, 13 March 2011
- {{r|Semiconductor}} {{r|Metal Oxide Semiconductor Field Effect Transistor}}1 KB (158 words) - 23:09, 12 February 2011
- ...c circuit that has been manufactured in the surface of a thin substrate of semiconductor material.157 bytes (20 words) - 08:42, 9 September 2009
- Rectifying semiconductor diode that converts electric energy into electromagnetic radiation at a vis211 bytes (27 words) - 07:07, 11 September 2009
- {{r|Metal-oxide-semiconductor field-effect transistor}} {{r|Semiconductor}}1 KB (161 words) - 10:02, 22 June 2011
- ...ection, made of two or more layers of material, of which at least one is a semiconductor.182 bytes (28 words) - 12:20, 10 January 2011