Metal-oxide-semiconductor field-effect transistor/Related Articles: Difference between revisions
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==Subtopics== | ==Subtopics== | ||
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Latest revision as of 11:00, 18 September 2024
- See also changes related to Metal-oxide-semiconductor field-effect transistor, or pages that link to Metal-oxide-semiconductor field-effect transistor or to this page or whose text contains "Metal-oxide-semiconductor field-effect transistor".
Parent topics
- Transistor [r]: A semiconductor device that allows a signal at its input terminal(s) (usually a current or a voltage) to control an output signal at its output terminal(s), acting either as a switch activated by the input signal or as an amplifier for the input signal. [e]
- CMOS [r]: A circuit architecture used in high-density integrated circuits involving both p-channel and n-channel MOSFETs and known for exceptionally low power consumption [e]
- Mode (electronics) [r]: A range of operation of an electrical device set by its bias condition or, when no signals are present, its quiescent or operating point. [e]
Subtopics
- Hybrid-pi model [r]: A circuit model used for analyzing the small-signal behavior of transistors. [e]
- Semiconductor [r]: A substance (usually a solid) with electrical conductivity intermediate between metals and insulators. [e]
- Electronic band structure [r]: The very closely spaced energy levels available to electrons in solids, which are separated from each other by energy gaps. [e]
- Fermi function [r]: The equilibrium occupancy of an energy level in a system of independent fermions at a fixed temperature. [e]
- Semiconductor diode [r]: Two-terminal device that conducts current in only one direction, made of two or more layers of material, of which at least one is a semiconductor. [e]
- MOS capacitor [r]: A two-terminal device consisting of three layers: a metal gate, a semiconducting body and a separating insulator, often an oxide. [e]