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Complementary Metal Oxide Silicon (CMOS) circuit technology is one form of circuitry using MOSFETs, and is used for Very Large Scale Integration (VLSI) systems.[1] Thanks to the properties of complementary MOS transistors, this silicon planar technology has enabled the creation of low-cost and low-energy circuits. These advantages have meant that this technology is recognized as the central technology behind the microelectronics industry.

The original idea of using complimentary devices to make a simple inverter circuit is due to Frank Wanlass and CT Sah at Fairchild Semiconductor Corporation in 1963. This invention was followed in 1968 with the first commercial CMOS integrated circuits by a group at RCA under Albert Medwin.[2]

The underlying idea behind CMOS technology is to create pairs of complementary transistors, that is, circuits using both p-channel and n-channel MOSFETs. The result is power efficient circuits that reduce the requirement for heat removal from the system. Each device pair is able to create logic gates based on Boolean principles used in digital electronics.