Semiconductor/Related Articles: Difference between revisions
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==Parent topics== | ==Parent topics== | ||
{{r|Solid state physics}} | |||
{{r|Electronic band structure}} | |||
{{r| | |||
{{r| | |||
==Subtopics== | ==Subtopics== | ||
===Materials=== | |||
{{r|Germanium}} | |||
{{r|Silicon}} | |||
{{r|Lead sulfide}} | |||
{{r|Cadmium zinc telluride}} | |||
{{r|YAG}} | |||
{{r|Mercury cadmium telluride}} | |||
===Devices=== | |||
{{r|MOS capacitor}} | |||
{{r|MOSFET}} | |||
{{r|Semiconductor diode}} | |||
{{r|Schottky diode}} | |||
==Other related topics== | ==Other related topics== | ||
Latest revision as of 01:18, 11 April 2011
- See also changes related to Semiconductor, or pages that link to Semiconductor or to this page or whose text contains "Semiconductor".
Parent topics
- Solid state physics [r]: Add brief definition or description
- Electronic band structure [r]: The very closely spaced energy levels available to electrons in solids, which are separated from each other by energy gaps. [e]
Subtopics
Materials
- Germanium [r]: A chemical element, having the chemical symbol Ge, and atomic number (the number of protons) 32. [e]
- Silicon [r]: A chemical element, having the chemical symbol Si, and atomic number (the number of protons) 14. [e]
- Lead sulfide [r]: (PbS) Naturally occurring as galena, an important ore of lead, it also is used as an infrared light detector optimized for operation in the 1-3.5µm near IR band [e]
- Cadmium zinc telluride [r]: (CdZnTe) A semiconductor that, in response to X-rays and gamma rays, directly produces electrical signals rather than the visible light of scintillating materials [e]
- YAG [r]: Add brief definition or description
- Mercury cadmium telluride [r]: (MCT or HgCdTe) A semiconductor used for infrared light detection, which can be adjusted, in manufacturing, to cover different parts of the infrared band; operated as a thermoelectrically or liquid nitrogen cooled device [e]
Devices
- MOS capacitor [r]: A two-terminal device consisting of three layers: a metal gate, a semiconducting body and a separating insulator, often an oxide. [e]
- MOSFET [r]: A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connected to the gate contact),separated by an insulating layer (usually an oxide layer) from a semiconductor layer (connected to the body contact). The gate voltage switches "on" and "off" the electrical connection between a source and drain contact at the semiconductor surface. [e]
- Semiconductor diode [r]: Two-terminal device that conducts current in only one direction, made of two or more layers of material, of which at least one is a semiconductor. [e]
- Schottky diode [r]: A two-terminal electrical device consisting of conductive gate (for example, a metal) on top of a semiconductor body used for switching, rectification and photo-detection [e]