CMOS: Difference between revisions

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imported>John R. Brews
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imported>John R. Brews
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'''CMOS technology and high-density integrated circuits ([[VLSI]])'''<ref>{{cite book |last = Waldner  |first = Jean-Baptiste  |authorlink = Jean-Baptiste Waldner  |title = Nanocomputers and Swarm Intelligence |publisher = [[John Wiley]]-[[ISTE]] |place = London |date = 2007  | pages = p26 |isbn = 1847040020}}</ref>
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Modern electronic circuits use the [[field-effect transistor]] (FET) and in particular the [[Metal-oxide-semiconductor field-effect transistor]] (MOSFET).
'''<u>C</u>omplementary <u>M</u>etal <u>O</u>xide <u>S</u>ilicon (CMOS)''' circuit technology is one form of circuitry using MOSFETs, and is used for <u>V</u>ery <u>L</u>arge <u>S</u>cale <u>I</u>ntegration (VLSI) systems.<ref>


In 1930, [[Julius Edgar Lilienfeld]] (1881-1963), from the University of Leipzig applied for a patent in which he described an element bearing resemblance to the MOS transistor and which could have been the first transistor in history. We had to wait until the 1960s in order to see the arrival of such devices, whose development was made possible with the noted progress in the field of bipolar transistors and in particular in the resolution of problems with the oxide semi-conductor interface. Today, the MOS transistor is the key element of digital integrated circuits on a large scale due to both the simplicity in its production and its small size.
{{cite book |last = Waldner  |first = Jean-Baptiste  |authorlink = Jean-Baptiste Waldner  |title = Nanocomputers and Swarm Intelligence |publisher = [[John Wiley]]-[[ISTE]] |place = London |date = 2007  | pages = p26 |isbn = 1847040020}}


The MOS transistor is a FET made up of a [[semiconductor]] substrate (B or Bulk) and covered with a layer of oxide on which there is the gate electrode (G or Gate). By applying a potential difference between the gate (G) and the substrate (B), an electric field in the semi-conductor is created causing the dominant carriers to be pushed back far from the oxide semi-conductor interface, leaving the non-dominant carriers coming from two complementary sectors in the substrate known as the source (S) and the drain (D). These sectors form a thin layer of mobile charges known as a canal. These charges are able to transit between the drain and the source, both of which are found at the extreme ends of the canal.
</ref> Thanks to the properties of complementary MOS transistors, this [[silicon planar technology]] has enabled the creation of low-cost and low-energy circuits. These advantages have meant that this technology is recognized as the central technology behind the microelectronics industry.


<u>C</u>omplementary <u>M</u>etal <u>O</u>xide <u>S</u>ilicon (CMOS) technology evolved from MOSFET technology and is used for <u>V</u>ery <u>L<\u>arge <u>S</u>cale <u>I</u>ntegration (VLSI) systems. Thanks to the properties of complementary MOS transistors, this [[silicon planar technology]] has enabled the creation of low-cost and low-energy circuits. These advantages have meant that this technology is recognized as the central technology behind the microelectronics industry.
The underlying idea behind CMOS technology is to create pairs of complementary transistors, that is, circuits using both ''p''-channel and ''n''-channel MOSFETs. The result is power efficient circuits that reduce the requirement for heat removal from the system. Each device pair is able to create logic gates based on Boolean principles used in digital electronics.
 
The underlying idea behind CMOS technology is to create pairs of complementary transistors (i.e. a P-type coupled transistor and an N-type coupled transistor). Each pair is able to create logic gates based on Boolean principles used in digital electronics.


==References==
==References==
{{reflist|2}}
{{reflist|2}}

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Complementary Metal Oxide Silicon (CMOS) circuit technology is one form of circuitry using MOSFETs, and is used for Very Large Scale Integration (VLSI) systems.[1] Thanks to the properties of complementary MOS transistors, this silicon planar technology has enabled the creation of low-cost and low-energy circuits. These advantages have meant that this technology is recognized as the central technology behind the microelectronics industry.

The underlying idea behind CMOS technology is to create pairs of complementary transistors, that is, circuits using both p-channel and n-channel MOSFETs. The result is power efficient circuits that reduce the requirement for heat removal from the system. Each device pair is able to create logic gates based on Boolean principles used in digital electronics.

References

  1. ↑ Waldner, Jean-Baptiste (2007). Nanocomputers and Swarm Intelligence. John Wiley-ISTE, p26. ISBN 1847040020. 
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