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- 12 bytes (1 word) - 09:38, 14 January 2011
- {{Image|Fermi function.PNG|right|300px|Fermi occupancy function ''vs''. energy departure from Ferm The '''Fermi function''' or, more completely, the '''Fermi-Dirac distribution function''' describ19 KB (3,143 words) - 05:30, 9 September 2011
- | pagename = Fermi function | abc = Fermi function826 bytes (67 words) - 09:38, 14 January 2011
- 169 bytes (24 words) - 11:55, 18 January 2011
- 636 bytes (85 words) - 17:51, 15 January 2011
- 935 bytes (145 words) - 12:02, 18 January 2011
Page text matches
- #REDIRECT [[Fermi function]]28 bytes (3 words) - 10:28, 14 January 2011
- | pagename = Fermi function | abc = Fermi function826 bytes (67 words) - 09:38, 14 January 2011
- {{r|Fermi function}}638 bytes (83 words) - 12:01, 18 January 2011
- {{r|Fermi function}}908 bytes (144 words) - 12:58, 11 February 2011
- {{r|Fermi function}}996 bytes (155 words) - 09:18, 13 June 2011
- {{r|Fermi function}}1,021 bytes (158 words) - 10:01, 22 June 2011
- {{r|Fermi function}}1 KB (169 words) - 09:11, 13 June 2011
- {{Image|Fermi function.PNG|right|300px|Fermi occupancy function ''vs''. energy departure from Ferm The '''Fermi function''' or, more completely, the '''Fermi-Dirac distribution function''' describ19 KB (3,143 words) - 05:30, 9 September 2011
- {{r|Fermi function}}3 KB (357 words) - 04:07, 22 November 2023
- The figure shows the [[Fermi function]] on the left at a non-zero temperature for the intrinsic case (equal numbe The example in the figure shows the [[Fermi function|Fermi occupancy level]] in the bulk material beyond the range of the applie11 KB (1,755 words) - 13:05, 2 February 2011
- ...re limit of both [[Bose-Einstein statistics]] (valid for [[boson]]s) and [[Fermi function|Fermi-Dirac statistics]] (valid for [[fermions]]).8 KB (1,247 words) - 12:22, 12 March 2011
- ...electron population of the bands depends upon how close they are to the [[Fermi function#Fermi level|Fermi level]] (the horizontal dashed line): because this separa20 KB (3,427 words) - 06:28, 15 October 2013
- ...near its valence band edge, as set by its acceptor impurity doping. (See [[Fermi function#Fermi level|Fermi level]]). The Fermi level in the metal ''E<sub>Fm</sub>'' ...simple [[Fermi_function#Boltzmann_limit|Boltzmann approximation]] to the [[Fermi function]], the hole density on the semiconductor side is increased under forward bi31 KB (4,880 words) - 08:51, 25 October 2013