Fermi function/Related Articles: Difference between revisions
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==Other related topics== | ==Other related topics== | ||
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{{r|Boltzmann distribution}} | |||
{{r|Semiconductor}} | {{r|Semiconductor}} | ||
{{r|Semiconductor diode}} | {{r|Semiconductor diode}} | ||
{{r|Electronic band structure}} | {{r|Electronic band structure}} | ||
==Articles related by keyphrases (Bot populated)== | |||
{{r|MOS capacitor}} | |||
Latest revision as of 07:00, 16 August 2024
- See also changes related to Fermi function, or pages that link to Fermi function or to this page or whose text contains "Fermi function".
Parent topics
Subtopics
- Boltzmann distribution [r]: Expression for the relative probability that a subsystem of a physical system in thermal equilibrium has a certain energy. [e]
- Semiconductor [r]: A substance (usually a solid) with electrical conductivity intermediate between metals and insulators. [e]
- Semiconductor diode [r]: Two-terminal device that conducts current in only one direction, made of two or more layers of material, of which at least one is a semiconductor. [e]
- Electronic band structure [r]: The very closely spaced energy levels available to electrons in solids, which are separated from each other by energy gaps. [e]
- MOS capacitor [r]: A two-terminal device consisting of three layers: a metal gate, a semiconducting body and a separating insulator, often an oxide. [e]