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- [[File:1st-Transistor.jpg|thumb|right|300px|The first transistor ever made was created using a bent-up paperclip, among other pieces. It wa In [[electronics]], a '''transistor''' is a [[semiconductor]] device that allows a signal at its input terminal3 KB (447 words) - 13:31, 5 July 2022
- 290 bytes (44 words) - 13:42, 10 June 2011
- 372 bytes (56 words) - 13:22, 10 June 2011
- ...lanar bipolar transistor.PNG|right|200px|A planar ''npn'' bipolar junction transistor as might be constructed in a [[integrated circuit]].}} ...s]], the '''bipolar transistor''', more completely the '''bipolar junction transistor''', is a three-terminal [[semiconductor|semiconductor device]] used for swi20 KB (3,320 words) - 07:39, 23 October 2021
- {{r|Metal-oxide-semiconductor field-effect transistor}} {{r|Bipolar transistor}}1 KB (161 words) - 10:02, 22 June 2011
- 542 bytes (76 words) - 11:41, 12 June 2011
- 110 bytes (12 words) - 15:13, 10 June 2011
- {{r|Metal-oxide-semiconductor field-effect transistor}}1 KB (169 words) - 09:11, 13 June 2011
- #REDIRECT [[Metal-oxide-semiconductor field-effect transistor]]63 bytes (4 words) - 12:06, 16 January 2011
- ...by the gate, the so-called [[field effect]]. This [[Transistor#Transistors|transistor]] was invented by Dawon Khang and Martin Atalla in 1960, at [[Bell Laborato ...at opposite sides of the gate called ''source'' and ''drain''. Because the transistor is symmetrical, they can swap their functions. They do not permit current f25 KB (4,018 words) - 04:18, 1 November 2013
- 953 bytes (144 words) - 12:16, 18 June 2011
- 321 bytes (46 words) - 13:35, 4 January 2011
- #REDIRECT [[Metal-oxide-semiconductor field-effect transistor]]63 bytes (4 words) - 06:52, 19 November 2011
- 437 bytes (70 words) - 13:44, 8 January 2011
- <noinclude>{{Subpages}}</noinclude>A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connecte417 bytes (62 words) - 22:20, 10 April 2011
- {{r|Transistor}}1,021 bytes (158 words) - 10:01, 22 June 2011
- #REDIRECT [[Metal Oxide Semiconductor Field Effect Transistor/Definition]]74 bytes (8 words) - 13:35, 4 January 2011
- {{r|Transistor}}896 bytes (141 words) - 13:49, 8 January 2011
- 286 bytes (42 words) - 13:43, 18 June 2011
Page text matches
- ...ror that incorporates an emitter degeneration resistor for only the output transistor, enabling the current source to generate low currents using only moderate r291 bytes (40 words) - 15:09, 17 December 2010
- * {{rpl|Metal Oxide Semiconductor Field Effect Transistor}} * {{rpl|Bipolar transistor}}416 bytes (46 words) - 10:31, 2 April 2024
- #redirect [[Transistor]]24 bytes (2 words) - 20:57, 5 January 2024
- #REDIRECT [[Metal-oxide-semiconductor field-effect transistor]]63 bytes (4 words) - 12:12, 16 January 2011
- #REDIRECT [[Metal-oxide-semiconductor field-effect transistor]]63 bytes (4 words) - 06:52, 19 November 2011
- #REDIRECT [[Metal-oxide-semiconductor field-effect transistor]]63 bytes (4 words) - 12:06, 16 January 2011
- #REDIRECT [[Metal Oxide Semiconductor Field Effect Transistor/Definition]]74 bytes (8 words) - 13:35, 4 January 2011
- ...oinclude>A circuit model used for analyzing the small-signal behavior of [[transistor]]s.115 bytes (15 words) - 08:14, 12 June 2011
- [[File:1st-Transistor.jpg|thumb|right|300px|The first transistor ever made was created using a bent-up paperclip, among other pieces. It wa In [[electronics]], a '''transistor''' is a [[semiconductor]] device that allows a signal at its input terminal3 KB (447 words) - 13:31, 5 July 2022
- A single bipolar transistor amplifier with grounded base, signal applied to the emitter and output take218 bytes (32 words) - 10:47, 2 July 2011
- ...the behavior and effects of [[electron]]s (as in [[electron tube]]s and [[transistor]]s) and with electronic devices, systems, or equipment.230 bytes (32 words) - 12:08, 16 October 2010
- {{Image|Bell Labs water tower NJ1.jpg|right|300px|The iconic 3-legged "transistor" water tower in front of the (former) Bell Labs facility in Holmdel, NJ, in ...covering the existence of [[cosmic microwave background]], inventing the [[transistor]], and creating [[Unix]] and [[C (programming language)]].980 bytes (144 words) - 08:10, 11 March 2024
- {{r|metal-oxide-semiconductor field-effect transistor}} {{r|bipolar transistor}}961 bytes (147 words) - 11:23, 26 May 2011
- {{r|Bipolar transistor}} {{r|Metal-oxide-semiconductor field-effect transistor}}953 bytes (146 words) - 12:53, 26 May 2011
- {{r|Metal-oxide-semiconductor field-effect transistor}} {{r|Bipolar transistor}}1 KB (161 words) - 10:02, 22 June 2011
- ...istor effect, however, was erratic, and was replaced by vacuum tubes until transistor theory developed and transistors were manufactured from other materials.2 KB (264 words) - 08:02, 18 October 2013
- <noinclude>{{Subpages}}</noinclude>A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connecte417 bytes (62 words) - 22:20, 10 April 2011
- | '''number of transistors''' || 3,500 transistor on die<ref name=thocp1974-75/><ref name=IntelMuseum/> | '''transistor size''' || 10 micron<ref name=IntelMuseum/>2 KB (328 words) - 07:30, 18 March 2024
- A type of [[field effect|field-effect]] [[transistor]] with four electrical contacts and three layers: a metal top layer (connec418 bytes (61 words) - 22:21, 10 April 2011
- | '''number of transistors''' || 2,300 transistor on die<ref name=thocp1974-75/><ref name=IntelMuseum/> | '''transistor size''' || 10 micron<ref name=IntelMuseum/>2 KB (284 words) - 12:03, 6 March 2024