Metal-oxide-semiconductor field-effect transistor/Definition: Difference between revisions

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<noinclude>{{Subpages}}</noinclude>A semiconductor device consisting of a metal gate electrode separated by an insulating gate oxide from a semiconductor body. A voltage on the gate modulates the conductivity of a surface channel in the body that connects two body contacts, the source and drain.
<noinclude>{{Subpages}}</noinclude>A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connected to the gate contact), separated by an insulating layer (usually an oxide layer) from a semiconductor layer (connected to the body contact). The gate voltage switches "on" and "off" the electrical connection between a source and drain contact at the semiconductor surface.

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A definition or brief description of Metal-oxide-semiconductor field-effect transistor.

A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connected to the gate contact), separated by an insulating layer (usually an oxide layer) from a semiconductor layer (connected to the body contact). The gate voltage switches "on" and "off" the electrical connection between a source and drain contact at the semiconductor surface.

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