MOS capacitor/Related Articles: Difference between revisions
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imported>John R. Brews |
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{{r|MOSFET}} | {{r|MOSFET}} | ||
{{r|Fermi function}} | {{r|Fermi function}} | ||
Latest revision as of 12:58, 11 February 2011
- See also changes related to MOS capacitor, or pages that link to MOS capacitor or to this page or whose text contains "MOS capacitor".
Parent topics
Subtopics
- Semiconductor diode [r]: Two-terminal device that conducts current in only one direction, made of two or more layers of material, of which at least one is a semiconductor. [e]
- Schottky diode [r]: A two-terminal electrical device consisting of conductive gate (for example, a metal) on top of a semiconductor body used for switching, rectification and photo-detection [e]
- MOSFET [r]: A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connected to the gate contact),separated by an insulating layer (usually an oxide layer) from a semiconductor layer (connected to the body contact). The gate voltage switches "on" and "off" the electrical connection between a source and drain contact at the semiconductor surface. [e]
- Fermi function [r]: The equilibrium occupancy of an energy level in a system of independent fermions at a fixed temperature. [e]