File:Seimiconductor band bending.PNG: Difference between revisions

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imported>John R. Brews
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== Summary ==
== Summary ==
{{Image_Details|user-pd
Importing file
|description  = Band bending under external field for p-type semiconductor
|author      = [[User:John R. Brews|John R. Brews]]
|date-created = 2011-01-06
|pub-country  = USA
|notes        = Top panel: Applied voltage depletes holes from surface Bottom panel: Larger applied voltage further depletes holes but conduction band becomes low enough in energy to populate an inversion layer
|versions    =
}}
== Licensing/Copyright status ==
{{CC|zero|1.0}}

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