File:Seimiconductor band bending.PNG: Revision history

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11 March 2022

6 January 2011

  • curprev 19:2719:27, 6 January 2011‎ imported>John R. Brews‎ 492 bytes +492‎ uploaded a new version of "Image:Seimiconductor band bending.PNG": Labels; make depletion regions on right and left panels match
  • curprev 16:1016:10, 6 January 2011‎ imported>John R. Brews‎ 492 bytes 0‎ uploaded a new version of "Image:Seimiconductor band bending.PNG": Edit label, crop
  • curprev 16:0816:08, 6 January 2011‎ imported>John R. Brews‎ 492 bytes +492‎ No edit summary
  • curprev 14:2314:23, 6 January 2011‎ imported>John R. Brews‎ 489 bytes +489‎ {{Image_Details|user-pd |description = Band bending under external field for p-type semiconductor |author = ~~~ |date-created = 2011-01-06 |pub-country = |notes = Top panel: Applied voltage depletes holes from surface Bottom panel: Larger applied voltage further depletes holes but conduction band becomes low enough in energy to populate an inversion layer |versions = }}
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