User:John R. Brews/Draft: Difference between revisions
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==Schottky diode== | ==Schottky diode== | ||
The '''Schottky diode''' is a two-terminal device consisting of conductive ''gate'' (for example, a metal) on top of a semiconductor ''body''. | The '''Schottky diode''' is a two-terminal device consisting of conductive ''gate'' (for example, a metal) on top of a semiconductor ''body''. A generic name for this structure is the '''metal-semiconductor diode''' or '''M/S diode'''.<ref name=Sah> | ||
The term "Schottky diode" may be taken erroneously to refer to diffusion as the mechanism of operation as first proposed by Mott, Schottky and Davydov. However, the mechanism in most devices is [[thermionic emission]], as later proposed by Bethe. See {{cite book |title= Fundamentals of solid-state electronics |author=Chih-Tang Sah |url=http://books.google.com/books?id=205wsYbl2fAC&pg=PA474 |pages=p. 474 |chapter=§560: Metal/semiconductor diode |isbn=9810206372 |year=1991 |publisher=World Scientific}} | |||
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==Notes== | ==Notes== | ||
<references/> | <references/> | ||
Revision as of 10:32, 22 January 2011
Schottky diode
The Schottky diode is a two-terminal device consisting of conductive gate (for example, a metal) on top of a semiconductor body. A generic name for this structure is the metal-semiconductor diode or M/S diode.[1]
Notes
- ↑ The term "Schottky diode" may be taken erroneously to refer to diffusion as the mechanism of operation as first proposed by Mott, Schottky and Davydov. However, the mechanism in most devices is thermionic emission, as later proposed by Bethe. See Chih-Tang Sah (1991). “§560: Metal/semiconductor diode”, Fundamentals of solid-state electronics. World Scientific, p. 474. ISBN 9810206372.
http://books.google.com/books?id=FPlJQ0iO7oQC&pg=PA134&dq="Schottky+diode"&hl=en&ei=iAg6TeO7AYSasAOk67WhAw&sa=X&oi=book_result&ct=result&resnum=8&ved=0CGIQ6AEwBw#v=onepage&q="Schottky diode"&f=false